實驗室簡介
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(A) SCI期刊論文: (B) 研討會論文: (C) Patents:
　 　 　
Publication List of Yu-Shyan Lin
(A) SCI期刊論文:
No.  
(1) Yu-Shyan Lin, z Yeh-Chang Ma, and Yu-Ting Lin, "Effects of Selective and Nonselective Wet Gate Recess on InAlAs/InGaAs Metamorphic Field-Effect Transistors with Double Delta Doping in InGaAs Channels" Journal of The Electrochemical Society, 158 (3) H305-H311, 2011.
(2) Y. S. Lin and J. J. Jiang, “Reduction of turn-on, knee, and offset voltages of
InAlGaP/GaAs HBTs using δ-doping in the InAlGaP Emitter,” IEEE Trans. Electron Device, vol. 57, pp. 2970-2977, 2010.
(3) Y. S. Lin , Y. J. Jou,and P. C. Hung ,“Stability and effect of passivation on InP/InGaAs double heterojunction bipolar transistors” Appl. Phys.  Lett., vol. 94, p.063506 , 2009.
(4) Y. S. Lin and J. J. Jiang, “Novel delta-doped InAlGaP/GaAs heterojunction bipolar transistor,” IEEE Electron Device Lett.. vol. 29, p.671, 2008.
(5) Y. S. Lin and Bo-Yuan Chen, “Comprehensive Characterization of In0.45Al0.55As/ In0.5Ga0.5As/InXAl1-XAs metamorphic high-Electron mobility transistor on GaAs Substrate,” J. Electrochem. Soc., vol. 153, p. G1005, 2006.
(6) Y. S. Lin and Bo-Yuan Chen, “Performance of AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistor as a function of temperature,” J. Electrochem. Soc., vol.  154, p.H406, 2007.
(7) Y. S. Lin and Yu-Lung Hsieh, “Effect of temperature on novel InAlGaP/GaAs/ InGaAs camel-gate pseudomorphic high-electron mobility transistors,” J. Electrochem. Soc., vol.153, p.G498, 2006.
(8) Y. S. Lin, Kuei-Chu Hsu, and Yu-Ming Huang, “Surface roughness of sputtered ZnO films,” Phys. Scr., vol. T126, p.68, 2006.
(9) Y. S. Lin, “Breakdown characteristics of InP/InGaAs composite-collector double heterostructure bipolar transistor”, Appl. Phys. Lett, vol. 83, p. 5545, 2003.
(10) Y. S. Lin and Yu-Lung Hsieh,” Temperature-dependent characteristics of InGaP/InGaAs/GaAs high-electron mobility transistor measured between 77 and 470 K”, J. Electrochem. Soc., vol. 152, p. G778, 2005.
(11) Y. S. Lin and Jr Hung Huang,” Mobility enhancement and breakdown behavior in InP-based heterostructure field-effect transistor”, J. Electrochem. Soc., vol. 152, p.G627, 2005.
(12)

Y. S. Lin, D. H. Huang, Y. W. Chen, J. C. Huang, W. C. Hsu, “δ-doped InGaP/GaAs heterostrucure-emitter bipolar transistor grown by metalorganic chemical vapor deposition”, Thin Solid Films, vol. 515, p. 3978 , 2007.

(13) Y. S. Lin, D. H. Huang, W. C. Hsu, T. B. Wang, R. T. Hsu, and Y. H. Wu, “n+-GaAs/p+-InAlGaP/n+-InAlGaP camel-gate high-electron mobility transistors,” Electrochem. Solid-State Lett., vol. 9, p. G37, 2006.
(14) Y. S. Lin, D. H. Huang, W. C. Hsu, T. B. Wang, K. H. Su, J. C. Huang, and C. H. Ho,” Improved InAlGaP-based heterostructure field-effect transistors,” Semicond. Sci. Tech., vol. 21, p. 540, 2006.
(15) Y. S. Lin, D. H. Huang, W. C. Hsu, K. H. Su and T. B. Wang, “Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistor using emitter edge-thinning,” Semicond. Sci. Tech., vol. 21, p. 303, 2006.
(16) Y. S. Lin, W. C. Hsu, F. C. Jong, Y. Z. Chiou, Y. J. Chen, and J. J. Tang “Characteristics of spike-free single and double heterostructure-emitter bipolar transistors”, Jpn. J. Appl. Phys., vol. 43, p.3285, 2004.
(17) C. H. Ho, J. H. Li, Y. S. Lin, ”Optical characterization of a GaAs/In0.5(AlxGa1-x)0.5P/GaAs heterostructure cavity by piezoreflectance spectroscopy,” Optics Express, vol. 15, p. 13886, 2007.
(18) D. H. Huang, W. C. Hsu, Y. S. Lin, J. H. Yeh, and J. C. Huang, “A metamorphic heterostructure field-effect transistor with a double delta-doped channel,” Semicond. Sci. Tech., vol. 22, p. 784, 2007.
(19) D. H. Huang, W. C. Hsu, Y. S. Lin, J. C. Huang, “Thermal-stable characteristics of metamorphic double delta-doped heterostructure field-effect transistor,” Jpn. J. Appl. Phys., vol. 46, p.6595, 2007.

(20)

 T. B. Wang, W. C. Hsu, J. L. Su, R. T. Hsu, Y. H. Wu, Y. S. Lin, and K. H. Su, “Comparison of Al0.32Ga0.68N/GaN heterostructure field-effect transistors with different channel thicknesses,” J. Electrochem. Soc., vol. 154, p. H131, 2007.

(21)

 K. H. Su, W. C. Hsu, P. J. Hu, Y. J. Chen, C. S. Lee, Y. S. Lin, and C.L. Wu, “ An “Improved symmetrically-graded doped-channel heterostructure field-effect transistor,” Journal of the Korean Physical Society, vol. 50, p.1878, 2007.

(22)

C. H. Ho, J. H. Li, Y. S. Lin, ”Thermoreflectance characterization of interband transitions of an In0.34Al0.66As0.85Sb0.15 film expitaxy on InP,” Appl. Phys. Lett, vol. 89, p. 191906, 2006.

(23)

C. H. Ho, K. W. Huang, and Y. S. Lin, “Photoreflectance and Photoluminescence Study of InxGa1-xAs/GaAs Graded-Channel High Electron Mobility Transistors＂, J. Electrochem. Soc., vol. 153, p. G966, 2006.

(24)

W. C. Hsu, D. H. Huang, Y. S. Lin, Y. J. Chen, J. C. Huang, and C. L. Wu, “Performance improvement in tensile-strained In0.5Al0.5As/InXGa1-XAs/ In0.5Al0.5As metamorphic HEMT,” IEEE Trans. Electron Device, vol. 53, p. 406, 2006.

(25)

D. H. Huang, W. C. Hsu, Y. S. Lin, Y. H. Wu, R. T. Hsu, J. C. Huang and Y. K. Liao, “Comparative study of In0.52Al0.48As/InxGa1-xAs/InP high-electron- mobility transistors with a symmetrically graded and an inversely graded channel,” Semicond. Sci. Tech., vol. 21, p. 781, 2006.

(26)

D. H. Huang, W. C. Hsu, Y. S. Lin, J. C. Huang, and C. L. Wu, “Strain-Relaxed In0.1Al0.25Ga0.65As/In0.22Ga0.78As/In0.1Al0.25Ga0.65As HEMT,” J. Electrochem. Soc., vol. 153, p. G826, 2006.

(27)

C. H. Ho, K. W. Huang, Y. S. Lin, and D. H. Lin, “Practical photoluminescence and photoreflectance spectroscopic system for optical characterization of semiconductor devices”, Optics Express, vol. 13, p. 3951, 2005.

(28)

W. C. Hsu, Y. J. Chen, C. S. Lee, T. B. Wang, J. C. Huang, D. H. Huang, K. H. Su, Y. S. Lin, and C. L. Wu,“Characteristics of In0.425Al0.575As/ InXGa1-X As Metamorphic HEMTs with pseudomorphic and symmetrically- graded channel”, IEEE Trans. Electron Device, vol. 52, p. 1079, 2005.

(29)

W. C. Hsu, Y. J. Chen, C. S. Lee, T. B. Wang, Y. S. Lin, and C. L. Wu, “High-temperature thermal stability performance in delta-doped In0.425Al0.575As/ In0.65Ga0.35As metamorphic HEMT”, IEEE Electron Device Lett., vol.26, p. 59, 2005.

(30)

Y. J. Chen, W. C. Hsu, Y. W. Chen, Y. S. Lin, R. T. Hsu, and Y. H. Wu, “InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations”, Solid-State Electron., vol. 49, p. 163, 2005.

(31)

Y. W. Chen, Y. J. Chen, W. C. Hsu, R. T. Hsu, Y. H. Wu, and Y. S. Lin,“ Enhancement-mode In0.52Al0.48As/In0.6Ga0.4As tunneling real space transfer HEMT,” J. Vac. Sci. Technol. B., vol. 22, p. 974, 2004.

(32)

Y. W. Chen, W. C. Hsu, R. T. Hsu, Y. H. Wu, Y. J. Chen, and Y. S. Lin, “Characteristics of In0.52Al0.48As/InXGa1-XAsyP1-y/In0.52Al0.48As high electron-mobility transistors,“J. Vac. Sci. Technol. B., vol. 22, p. 1044, 2004.

(33)

Y. W. Chen, W. C. Hsu, R. T. Hsu, Y. H. Wu, Y. J. Chen, and Y. S. Lin, “Investigation of InGaP/GaAs heterojunction bipolar transistor with doping graded base,“ J. Vac. Sci. Technol. B, vol. 21, p. 2555, 2003.

(34)

W. C. Hsu, C. S. Lee, and Y. S. Lin, “Characteristics of δ-doped InP heterostructures using In0.34Al0.66As0.85Sb0.15 Schottky layer”, J. Appl. Phys., vol. 91, p. 1385, 2002.

(35)

Y. W. Chen, W. C. Hsu, H. M. Shieh, Y. J. Chen, Y. S. Lin, Y. J. Li, and T. B. Wang, “ High breakdown characteristic δ-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer HEMT”, IEEE Trans. Electron Device, vol. ED-49, p.221, 2002.

(36)

Y. J. Chen, Y. W. Chen, Y. S. Lin, C. Y. Yeh, W. C. Hsu, “An improved In0.34Al0.66As0.85Sb0.15/InP heterostructure utilizing coupled δ-doping InP channel,” Jpn. J. Appl. Phys., vol. 40, p. L7, 2001.
(37)

Y. J. Li, J. S. Su, Y. S. Lin, W. C. Hsu, “Investigation of a graded channel
InGaAs/GaAs heterostructure transistor, “Superlattice and Microstructures, vol. 28, p. 47, 2000.

(38)

Y. S. Lin, W. C. Hsu, C. Y. Yeh, and H. M. Shieh, “In0.34Al0.66As0.85Sb0.15/ δ (n+)-InP heterostructure field-effect transistors, ‘Appl. Phys. Lett., vol. 76, p. 3124, 2000.

(39)

Y. S. Lin, W. C. Hsu, and C. S. Yang, "Low-leakage-current and high-breakdown-voltage GaAs-based heterostructure field effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer", Appl. Phys. Lett., vol. 75, p. 3551, 1999.

(40)

Y. S. Lin, W. C. Hsu, C. H. Wu, W. Lin, and R. T. Hsu, “High breakdown voltage symmetric double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor”, Appl. Phys. Lett., vol. 75, p. 1616, 1999.

(41)

Y. S. Lin, Y. H. Wu, W. C. Hsu, J. S. Su, S. D. Ho, and W. Lin, "An improved In0.5Ga0.5P/GaAs double heterostructure-emitter bipolar transistor using emitter edge-thinning technique," Jpn. J. Appl. Phys., vol. 36, p. 2007, 1997.
(42)

Y. S. Lin, H. M. Shieh, W. C. Hsu, J. S. Su, J. Z. Huang, Y. H. Wu, S. D. Ho, and W. Lin, “Electrical characteristics of heterostructure-emitter bipolar transistors using spacer layers,” J. Vac. Sci. Technol. B, vol. 16, p. 958, 1998.
(43)

Y. S. Lin, W. C. Hsu, S. Y. Lu, W. Lin, “An improved heterojunction-emitter bipolar transistor using δ-doped and spacer layer,” Mat. Chem. and Phys., vol. 59, p. 91, 1999.
(44)

R. T. Hsu, Y. S. Lin, J. S. Su, W. C. Hsu, Y. H. Wu, and M. J. Kao, "Study of two-dimensional hole gas Concentration and hole mobility in zinc delta-doped GaAs and pseudomorphic GaAs/In0.2Ga0.8As heterostructures”, Superlattices and Microstructures, vol. 24, p. 175, 1998.

(45)

J. S. Su, W. C. Hsu, W. Lin, Y. S. Lin, "Enhanced real-space transfer in δ-doped GaAs/In0.1Ga0.9As/In0.25Ga0.75As two-step channel heterojunctions," J. Appl. Phys., vol. 82, p. 4076, 1997.
(46)

J. S. Su, W. C. Hsu, Y. S. Lin, W. Lin, "Controllable drain cut-in voltage with strong negative differential resistance in GaAs/InGaAs real-space transfer heterostructure, "Appl. Phys. Lett., vol. 70, p. 1002, 1997.
(47)

J. S. Su, W. C. Hsu, Y. S. Lin, W. Lin, C. L. Wu, M. S. Tsai, and Y. H. Wu, " A novel InAlAs/InGaAs two-terminal real-space transfer diode," IEEE Electron Device Lett., vol. 17, p. 43, 1996.

(48)

J. S. Su, W. C. Hsu, D. T. Lin, W. Lin, H. P. Shiao, Y. S. Lin, J. Z. Huang, and P. J. Chou, “High-breakdown voltage Al0.66In0.34As0.85Sb0.15/ In0.75Ga0.25As/InP heterostructure field-effect transistors,” Electron. Lett., vol. 32, p. 2095, 1996.
(B) 研討會論文:
No. 　
(1) Y. S. Lin and B. Y. Chen, ”Temperature-dependent In0.45Al0.55As/In0.5Ga0.5As metamorphic high-electron mobility transistors,” The 30th International Conference on the Physics of Semiconductors, Seoul Korea, July 25-30, 2010.
(2) Y. S. Lin and S. K. Liang, “Improved AlGaAs/InGaAs pseudomorphic high-electron mobility transistors,” The 30th International Conference on the Physics of Semiconductors, Seoul Korea, July 25-30, 2010.
(3) Y. S. Lin and Y. J. Jou,” Thermal and bias stabilities of InP/InGaAs composite-collector DHBT,” 16th International Symposium on the Physical & Failure Analysis of Integrated Circuits, China, July 6-10, pp. 311-314, 2009.
(4) Y. S. Lin, J. H. Jhung, T. B. Wang, and W. C. Hsu,” Improved InGaN/GaN blue light emitting diodes,” 2008年材料年會, Taipei, Taiwan, Nov. 21-22, p. 159-160, 2008.
(5) Y. S. Lin, Z. Y. Lin, Y. T. Lin, and W. C. Hsu,” Novel quaternary material for high electron mobility transistors,” 2008年材料年會, Taipei, Taiwan, Nov. 21-22, p. 113, 2008.
(6) Y. S. Lin, D. H. Huang, and J.R. Hung,” Double δ-doped InAlGaAs/InGaAs/InAlGaAs high-electron mobility transistor grown by MBE,” 2008 International Symposium on Materials for Enabling Nanodevices (ISMEN), Tainan, Taiwan, Sep. 3~5, 2008.
(7) Y. S. Lin, D. H. Huang, Y. C. Ma, and W. C. Hsu,” InAlAs/InGaAs/InP
High-Electron-Mobility Transistors Grown by LP-MOCVD,” 2008 International Symposium on Materials for Enabling Nanodevices (ISMEN), Tainan, Taiwan, Sep. 3~5, 2008.
(8) Y. S. Lin, B. Y. Chen and P. C. Huang,,” Improved AlGaAs/InGaAs/GaAs high-electron mobility transistor,” The 15th Symposium on Nano Device Technology (SNDT), Hsinchu, Taiwan, May 15-16, p. 73, 2008.
(9) Y. S. Lin and P. C. Huang,” InAlGaP-Based heterostructure field-effect transistors grown by MOCVD,” The 15th Symposium on Nano Device Technology (SNDT), Hsinchu, Taiwan, May 15-16, p. 29, 2008.
(10) Y. S. Lin, K. C. Hsu, J. H. Jhung, and Y. T. Lin,” Improved InGaP/GaAs high-speed devices,” Across the Taiwan Straits Conference on Modern Electrical Engineering Technologies 2008 (TSCMEET 2008), Tainan, Taiwan, Feb. 28-29, 2008, pp. 107-110.
(11) Y. S. Lin, K. C. Hsu, Y. T. Lin, and J. H. Jhung,” Study of InGaP/InGaAs/GaAs and InAlGaP/GaAs heterostructure,” Across the Taiwan Straits Conference on Modern Electrical Engineering Technologies 2008 (TSCMEET 2008), Tainan, Taiwan, Feb. 28-29, 2008, pp.111-115.
(12) H. W. Her, C. S. Sun, Y. S. Lin, and B. Y. Chen,” Study of AlGaAs/InGaAs high-electron mobility transistors,” 2008 Conference on Electronics Technology & Applications, Kaohsiung, Taiwan, May 16, 2008.
(13) Y. S. Lin, “Novel Compound Semiconductor Material,” Materials Today Asia, Beijing, China, Sep. 3-5, 2007.
(14) Y. S. Lin and B. Y. Chen,” Comprehensive Characterization of AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron Mobility Transistor,” 2007 International Electron Devices and Materials Symposia (2007 IEDMS), Hsinchu, Taiwan, Dec. 7-8, 2007.
(15) Yu-Shyan Lin, You-Song, Lin, Kuan-Hsien Hsieh, “Characteristics of composite-channel high-electron mobility transistor,” 2007 International Symposium on Nano Science and Technology (ISNST), Tainan Taiwan, Nov. 8-9, p. 290, 2007.
(16) Kuei-Chu Hsu, Yu-Shyan Lin, You-Song Lin, “Study of zinc oxide grown on silicon and glass substrates,” 光電科技研討會, Taichung, Taiwan, Nov. 30/Dec.1, p. 105, 2007.
(17) Kuei-Chu Hsu, Ching-Hwa Ho, Yu-Shyan Lin, You-Song Lin, and K. W. Huang, “Optical and electrical performance of GaAs/InGaAs/GaAs high speed device,” 2007 光電科技研討會, Taichung, Taiwan, Nov. 30/Dec.1, p. 106, 2007.
(18) J. S. Li, J. H. Li, Y. S. Lin, C. H. Ho, “Thermoreflectance characterization of interband transitions of In0.34Al0.66As0.85Sb0.15 epitaxy on InP,” 2007 光電科技研討會, Taichung, Taiwan, Nov. 30/Dec.1, p. 69, 2007.
(19) Y. S. Lin and K. C. Hsu, “Novel InP-based heterostructure field-effect transistor,” 33rd International Symposium on Compound Semiconductors, Vancouver Canada, August 13-17, 2006, p. 185.
(20) Y. S. Lin and B. Y. Chen, “InAlAs/InGaAs/InAlAs metamorphic high-electron mobility transistor,” 2006 International Electron Devices and Materials Symposia (2006 IEDMS), Tainan Taiwan, December 7-8, 2006, p. 90.
(21)

Y. S. Lin, D. H. Huang, W. C. Hsu, Y. H. Wu and R. T. Hsu,” n+-GaAs/p+-InAlGaP/n-InAlGaP camel-gate high-electron mobility transistors grown by MOCVD,” 33rd International Symposium on Compound Semiconductors, Vancouver, Canada, August 13-17, 2006, p. 187.
(22) Y. S. Lin, D. H. Huang, W. C. Hsu, T. B. Wang and K. H. Su,“ InP-based composite-collector double heterojunction bipolar transistor,” 33rd International Symposium on Compound Semiconductors, Vancouver Canada, August 13-17, 2006, p. 83.
(23) Y. S. Lin, D. H. Huang, W. C. Hsu, T. B. Wang, K. H. Su, J. C. Huang, and S. J. Yu, “InP-based double heterojunction bipolar transistor with emitter edge-thinning,” Journal of Taiwan vacuum society, vol. 18, no. 4, p. 77, 2006.
(24) W. C. Hsu, D. H. Huang, Y. S. Lin, J. C. Huang, and Y. K. Liao, Thermal stability in metamorphic high-electron-mobility transistor with tensile-strained V-shaped channel,” 2006 International Electron Devices and Materials Symposia (2006 IEDMS), Tainan, Taiwan, December 7-8, 2006, p. 40.
(25) K. H. Su, W. C. Hsu, Y. S. Lin, C. S. Lee, and C. L. Wu, Improved symmetric
doped-channel heterostructure field-effect transistor, International Symposium on the Physics of Semiconductors and Applications (ISPSA), Jeju, Korea, August 22-25, 2006, pp. B1-05.
(26) T. B. Wang, W. C. Hsu, R. T. Hsu, Y. H. Wu, and Y. S. Lin, “Annealing effect on the buffer layer of high-quality crystalline GaN＂, 28th International Conference on the Physics of Semiconductors, Vienna, Austria, 2006.
(27) Y. S. Lin, W. C. Hsu, D. H. Huang, T. B. Wang, and K. H. Su, “Electrical characteristics of δ-doping InGaP/GaAs heterojunction-emitter bipolar transistor,” 21st Nordic Semiconductor Meeting, Oslo, Norway, August 21-23, 2005.
(28) Y. S. Lin, K. C. Hsu, and Y. M. Huang, “Study of surface roughness of sputtered ZnO films,” 21st Nordic Semiconductor Meeting, Oslo, Norway, August 21-23, 2005.
(29) Y. S. Lin, W. C. Hsu, D. H. Huang, Y. J. Chen, T. B. Wang, and J. H. Huang, “Improved InP/InGaAs double heterojunction bipolar transistor,” The 12th Symposium on Nano Device Technology, p. 267 , 2005.
(30) 林育賢, 林育聖, 林亮宇, 蔣富成, “28 GHz 砷化鎵/砷化銦鎵積體化之低雜訊放大器, “第三屆現代通訊科技應用學術研討會,p. 51, 2005.
(31) 黃群凱, 林育賢, 林亮宇, “2.4 GHz 低雜訊放大器之設計與製作, “第三屆現代通訊科技應用學術研討會,p. 47, 2005.
(32) K. H. Su, W. C. Hsu, Y. S. Lin, I. L. Chen, J. S. Wang, R. S. Hsiao, and J. Y. Chi,” InGaAsN:Novel material for high electron mobility transistors,” 2005 International Electron Devices and Materials Symposia, Hsinchu, Taiwan, R. O. C., pp. , 2005.
(33) Y. S. Lin, L. C. Lin, and F. C. Jong, “Novel gap filling approach for 90 nm and 65 nm generations dual damascene process applications,” The 1st Applied Science and Technology Conference, p. 50, 2004.
(34) Y. S. Lin, Y. M. Huang, S. Sasa, L.Y. Lin, and F. C. Jong, “Surface roughness of ZnO films grown by RF magnetron sputtering,” The 1st Applied Science and Technology Conference, p.17, 2004.
(35) Y. S. Lin, J. M. Chang, Y. Z. Chiou, K. M. Yang, “ Design of 35 GHz PHEMT MMIC power amplifier,“ 2004 Conference on Electronic Communication and Applications, p. 44, 2004.
(36) Y. S. Lin, P. F. Hung, R. H. You, and S. C. Chen, “Multi-layered 5.25 GHz circular patch antenna,” Second Conference on Communication Application, p. 135, 2004.
(37) Y. S. Lin, P. F. Hung, L. Y. Lin, and R. H. You, “5.25 GHz CMOS low-noise amplifier,” Second Conference on Communication Application, p. 138, 2004.
(38) 林育賢, 楊昆明, 邱裕中,林育聖, 林亮宇, “35 GHz 單石微波積體電路低雜訊放大器,” 全國電信研討會, p. 1303, 2004.
(39) 林育賢, 邱裕中, 林亮宇, “應用在LMDS 之28 GHz 功率放大器, 全國電信研討會,” p. 1568, 2004.
(40) Y. S. Lin, “Novel single δ-doped InAlAsSb/InP heterostructure field-effect transistor with high-breakdown voltage and high-linearity,” Journal of Taiwan Vacuum Society, p. 59, 2003.
(41) 尤仁宏、洪百甫、陳世中、林育賢, “可接收網路上電源之可攜式醫學電子裝置,”醫學工程年會研討會, p. 56, 2003.
(42) 洪百甫、尤仁宏、林育賢、陳世中,“應用於接收傳送在網路上的電能之可攜式電子裝置, 第24 屆電力工程研討會, p.1812, 2003.
(43) Y. S. Lin, W. C. Hsu, and C. H. Wu, “High breakdown voltage In0.49Ga0.51P/ In0.25Ga0.75As/GaAs HEMT grown MOCVD,” 1999 Electron Devices and Materials Symposia, R.O.C., pp. 481-484, 1999.
(44) Y. S. Lin, W. C. Hsu, J. S. Su, and W. Lin, “Al0.66In0.34As0.85Sb0.15/ In0.75Ga0.25As/ InP heterostructure field-effect transistors with high-breakdown voltage,”1998 International photonics conference, Taipei, Taiwan, R.O.C., pp. 614-616, 1998.
(45) Y. S. Lin, W. C. Hsu, J. S. Su, J. Z. Huang, Y. H. Wu, S. D. Ho,and W. Lin, "An improved In0.5Ga0.5P/GaAs double heterostructure-emitter bipolar transistor grown by MOCVD," The Fourth Military Symposium on Fundamental Science, pp.305-314, 1997.
(46) W. C. Hsu, Y. S. Lin, and J. S. Su, “High current gain In0.5Ga0.5P/GaAs heterostructure- emitter-bipolar transistor utilizing GaAs spacers”, in State-of-the-Art Program on Compound Semiconductors XXVI symposium, 191st ECS Meeting, Montreal, Canada, pp. 263-268, 1997.
(47) S. Y. Lu, Y. S. Lin, C. L. Wu, and W. C. Hsu, " Electrical characteristics of In0.5Ga0.5P/ GaAs heterostructure-emitter bipolar transistors using spacer layers, "The 13th Technological & Vocational Education Conference of R. O. C., 1998.
(48) Y. J. Li, Y. S. Lin, C. L. Wu, and W. C. Hsu, "Symmetric delta-doped InGaAs/GaAs field-effect transistors with graded heterointerface, "The 13th Technological & Vocational Education Conference of R. O. C., 1998.
(49) J. S. Su, W. C. Hsu, Y. S. Lin, W. Lin, D. T. Lin, J. Z. Huang, and P. J. Chou, “Enhanced real-space transfer in δ-doped GaAs/In0.1Ga0.9As/ In0.25Ga0.75As two-step channel heterojunctions grown by LP-MOCVD,” 1996 International Electron Devices and Materials Symposia, Hsinchu, Taiwan, R. O. C., pp. 111-114, 1996.
(50) J. S. Su, W. C. Hsu, Y. S. Lin, W. Lin, C. L. Wu, M. S. Tsai, and Y. H. Wu, " A novel InAlAs/ InGaAs two-terminal real-space transfer diode, "2nd Chinese Optoelectronics Workshop, Tainan, Taiwan, R. O. C., pp. 83-88, 1995.
(C) Patents:

美國專利

　 　 　
( 1 ) 公告號 ： 6429468
　 專利名稱 ： In0.34A10.66AsSb0.15/InP HFET utilizing InP channels
　 發明人 ： W. C. Hsu, Y. S. Lin and C. Y. Yeh
　 專利國家 ： 美國
　 專利類型 ： 發明
　 公告日 ： August 6, 2002

中華民國專利

　 　 　
( 1 ) 公告號 ： 00466768
　 專利名稱 ： 一種以磷化銦為通道之砷銻化銦鋁／磷化銦異質結構場效電晶體
　 發明人 ： 許渭州、林育賢、葉佳彥、陳彥瑋
　 專利國家 ： 中華民國
　 專利類型 ： 發明
　 公告日 ： December 1, 2001
　
( 2 ) 公告號 ： 00441042
　 專利名稱 ： 砷化鎵／磷化銦鋁鎵異質結構場效電晶體及其製作方法
　 發明人 ： 許渭州、林育賢、楊清舜
　 專利國家 ： 中華民國
　 專利類型 ： 發明
　 公告日 ： June 16,2001
　
( 3 ) 公告號 ： 00296487
　 專利名稱 ： 實空間傳導二極體及其製造方法
　 發明人 ： 許渭州、林蔚、蘇建信、林育賢
　 專利國家 ： 中華民國
　 專利類型 ： 發明
　 公告日 ： January 21, 1997